Apparatus and a method for treating a substrate

ABSTRACT

A substrate treating method may include jetting a fluid containing an abrasive onto a substrate, and polishing the substrate using the jetted fluid.

CROSS-REFERENCE TO RELATED APPLICATION

This U.S. non-provisional patent application claims priority under 35U.S.C. §119 to Korean Patent Application No. 10-2012-0011354, filed onFeb. 3, 2012, in the Korean Intellectual Property Office, the disclosureof which is incorporated by reference herein in its entirety.

TECHNICAL FIELD

The inventive concept relates to a substrate treating apparatus and asubstrate treating method.

DISCUSSION OF THE RELATED ART

While a semiconductor device is produced, unwanted materials, such asparticles, organic pollutants, or metallic contaminants, may be left ona substrate of the semiconductor device. A cleaning process may beperformed to remove these materials from the substrate.

An example of one such cleaning process is an abrasive cleaning. In theabrasive cleaning, a polishing tool (e.g., a polishing brush, apolishing belt, and a polishing pad) may be used to mechanically polishthe surface of the substrate by using chemical-mechanical polishing(CMP) slurry provided on the substrate.

SUMMARY

An exemplary embodiment of the inventive concept provides a substratetreating method that may include jetting a fluid containing an abrasiveonto a substrate, and polishing the substrate using the jetted fluid.

An exemplary embodiment of the inventive concept provides a substratetreating apparatus that may include a supporting unit supporting asubstrate, a nozzle unit configured to jet a fluid containing anabrasive onto the substrate, and a supplying unit supplying the fluid tothe nozzle unit.

An exemplary embodiment of the inventive concept provides a substratetreating apparatus that may include a process module configured to jet afluid containing an abrasive through a nozzle to a substrate and anindex module configured to transfer the substrate from an outside sourceto the process module, wherein the nozzle is positioned over a topsurface of the substrate to be oriented toward the top surface of thesubstrate or is positioned adjacent to a side of the substrate so thatan axis of the nozzle is substantially parallel to the top surface ofthe substrate.

BRIEF DESCRIPTION OF THE DRAWINGS

Exemplary embodiments will be more clearly understood from the followingbrief description taken in conjunction with the accompanying drawings.FIGS. 1 through 14 represent non-limiting, exemplary embodiments asdescribed herein.

FIG. 1 is a plan view illustrating a substrate treating apparatusaccording to an exemplary embodiment of the inventive concept.

FIG. 2 is a sectional view illustrating a process chamber of FIG. 1,according to an exemplary embodiment of the inventive concept.

FIG. 3 is a plan view illustrating the process chamber of FIG. 2,according to an exemplary embodiment of the inventive concept.

FIG. 4 is a side view illustrating the nozzle unit of FIG. 2, accordingto an exemplary embodiment of the inventive concept.

FIG. 5 is a sectional view illustrating the nozzle unit of FIG. 2,according to an exemplary embodiment of the inventive concept.

FIG. 6 is a plan view illustrating the process chamber of FIG. 2,according to an exemplary embodiment of the inventive concept.

FIG. 7 is a schematic diagram illustrating the supplying unit of FIG. 2,according to an exemplary embodiment of the inventive concept.

FIG. 8 is a schematic diagram illustrating the supplying unit of FIG. 3,according to an exemplary embodiment of the inventive concept.

FIG. 9 is a flow chart illustrating a substrate treating methodaccording to an exemplary embodiment of the inventive concept.

FIG. 10 is a flow chart illustrating a jet polishing process accordingto an exemplary embodiment of the inventive concept.

FIG. 11 is a diagram illustrating a process of removing a depositionlayer from a substrate, according to an exemplary embodiment of theinventive concept.

FIG. 12 is a diagram exemplarily illustrating a thickness of thedeposition layer according to the presence or absence of chemical,according to an exemplary embodiment of the inventive concept.

FIG. 13 is a diagram illustrating an additive that can be used toprotect a surface of a substrate or a layer on the substrate, accordingto an exemplary embodiment of the inventive concept.

FIG. 14 is a graph showing a correlation between a jetting pressure anda polishing thickness of a substrate, according to an exemplaryembodiment of the inventive concept.

DETAILED DESCRIPTION OF THE EMBODIMENTS

Exemplary embodiments of the inventive concept will now be described indetail with reference to the accompanying drawings. The inventiveconcepts may, however, be embodied in many different forms and shouldnot be construed as being limited to the embodiments set forth herein.In the drawings, the thicknesses of layers and regions may beexaggerated for clarity. Like reference numerals in the drawings maydenote like or similar elements throughout the specification and thedrawings.

It will be understood that when an element is referred to as being“connected” or “coupled” to another element, it can be directlyconnected or coupled to the other element or intervening elements may bepresent. As used herein the term “and/or” includes any and allcombinations of one or more of the associated listed items.

As used herein, the singular forms “a,” “an” and “the” are intended toinclude the plural forms as well, unless the context clearly indicatesotherwise.

Hereinafter, a substrate treating apparatus 100 according to anexemplary embodiment of the inventive concept will be described.

The substrate treating apparatus 100 may perform a jet polishingprocess. For example, according to an embodiment, in the substratetreating apparatus 100, a fluid may be jetted onto a substrate S andpolishes the substrate S. According to an embodiment, the substrate Sincludes a substrate, which can be used to form a semiconductor device,a flat panel display, or a device with thin-film circuit patterns. Forexample, according to an embodiment, the substrate S may be one ofsemiconductor wafers (e.g., a silicon wafer), glass substrates, ororganic substrates.

According to an embodiment, the jet polishing process includes a processof jetting an abrasive-containing fluid (e.g., chemical-mechanicalpolishing slurry) on the substrate S. The jet polishing process mayremove an alien substance from the substrate S or may make a surface ofthe substrate S flat.

In an embodiment, the substrate treating apparatus 100 may be used toperform a jet polishing process on a semiconductor wafer, but theexemplary embodiments of the inventive concept are limited thereto. Forexample, according to an embodiment, the substrate treating apparatus100 may be used to perform the jet polishing on a substrate other thanthe semiconductor wafer.

FIG. 1 is a plan view illustrating a substrate treating apparatusaccording to an exemplary embodiment of the inventive concept.

Referring to FIG. 1, the substrate treating apparatus 100 may include anindex module 1000 and a process module 2000.

The index module 1000 may transport a substrate S from the outside tothe process module 2000, and the process module 2000 may perform a jetpolishing process.

The index module 1000 may constitute an equipment front end module(EFEM) and include a load port 1100 and a transferring frame 1200.

A carrier C containing the substrate S may be provided in the load port1100. In an exemplary embodiment, the carrier C may be a front openingunified pod (FOUP). The carrier C may be delivered from the outside tothe load port 1100 or from the load port 1100 to the outside by anoverhead transfer (OHT).

The transferring frame 1200 may enable the substrate S to be transferredbetween the carrier C and the process module 2000. The transferringframe 1200 may include an index robot 1210 and an index rail 1220. Theindex robot 1210 may be moved on the index rail 1220, and the substrateS may be delivered by the index robot 1210.

In an exemplary embodiment, the process module 2000 may include a bufferchamber 2100, a transfer chamber 2200, and a process chamber 3000.

The buffer chamber 2100 may provide a space in which the substrate S canbe temporarily stored before the substrate S is delivered between theindex module 1000 and the process module 2000. The buffer chamber 2100may include a buffer slot on which the substrate S may be disposed.Using the index robot 1210, the substrate S may be brought out from thecarrier C and loaded on the buffer slot, and using a transferring robot2210 the substrate S may be delivered from the buffer slot to theprocess chamber 3000. The buffer chamber 2100 may include a plurality ofbuffer slots arranged along a vertical direction, and a plurality of thesubstrates S may be stacked in the buffer chamber 2100.

The transfer chamber 2200 may be configured in such a way that thesubstrate S can be delivered between the buffer chamber 2100 adjacent tothe transfer chamber 2200 and the process chamber 3000. The transferchamber 2200 may include the transferring robot 2210 and a transferringrail 2220. The transferring robot 2210 may be moved on the transferringrail 2220 and delivers the substrate S to a predetermined position.

The process chamber 3000 may be disposed around the transfer chamber2200. The process chamber 3000 may process the substrate S, which may bedelivered from the transfer chamber 2200.

In an exemplary embodiment, a plurality of the process chambers 3000 maybe provided in the process module 2000. According to embodiments, theprocess chambers 3000 may be arranged at one or two opposite sides ofthe transfer chamber 2200 along a longitudinal direction of the transferchamber 2200. Alternatively, the process chambers 3000 may be stacked inthe vertical direction. The exemplary embodiments of the inventiveconcept are not limited thereto, and an internal structure orconfiguration of the process chamber 3000 may be modified inconsideration of various factors, such as foot print or processefficiency of the substrate treating apparatus 100.

In an exemplary embodiment, the process chamber 3000 may perform a jetpolishing process.

Hereinafter, the process chamber 3000 is described with reference toFIGS. 2 and 3 according to an exemplary embodiment of the inventiveconcept.

FIG. 2 is a sectional view illustrating the process chamber 3000 of FIG.1 according to an exemplary embodiment of the inventive concept, andFIG. 3 is a plan view illustrating the process chamber 3000 of FIG. 2according to an exemplary embodiment of the inventive concept.

Referring to FIGS. 2 and 3, the process chamber 3000 may include asupporting unit 3100, a nozzle unit 3200, and a supplying unit 3300.

The supporting unit 3100 may support the substrate S. The supportingunit 3100 may include a supporting plate 3110, a supporting member 3120,a rotating axis 3130, and a rotation driver 3140.

From a plan view, the supporting plate 3110 may have a shape similar tothe shape of the substrate S. For example, according to an embodiment,in the case where the substrate S is a semiconductor wafer, thesupporting plate 3110 may have a circular top surface.

The supporting member 3120 may be provided on the top surface of thesupporting plate 3110. The supporting member 3120 may be located at anedge region of the supporting plate 3110. The supporting member 3120 mayinclude a plurality of parts, each of which may be located at a positionspaced apart from a center of the supporting plate 3110 by a radius ofthe substrate S.

The supporting member 3120 may protrude from a top surface of thesubstrate S. The supporting member 3120 may support the substrate S. Thesupporting member 3120 may immobilize the substrate S. In an exemplaryembodiment, the supporting member 3120 may be shaped like a letter ‘L’or ‘U’, from a side view. For example, according to an embodiment, inthe case where the supporting member 3120 is shaped like the letter ‘L’,the supporting member 3120 may include an outer portion 3122 and aninner portion 3121 having a height smaller than a height of the outerportion 3122. The substrate S may be supported by the inner portion 3121and may be immobilized by the outer portion 3122. Due to the presence ofthe supporting member 3120, the substrate S may be prevented from beingdeviated from a normal position thereof when the substrate S is rotated.

A bottom surface of the supporting plate 3110 may be connected to therotating axis 3130, and the rotating axis 3130 may be connected to therotation driver 3140. Accordingly, a turning force of the rotationdriver 3140 may be delivered to the supporting plate 3110 via therotating axis 3130, and the substrate S may be rotated in conjunctionwith the supporting plate 3110.

The nozzle unit 3200 may jet a fluid onto the top surface of thesubstrate S. The fluid may be focused on a specific position of thesubstrate S since the fluid is jetted by the nozzle unit 3200.

The nozzle unit 3200 may include a nozzle bar 3210, a nozzle rod 3220, anozzle 3230, and a nozzle driver 3240. The nozzle bar 3210 may bedisposed at a side of the supporting plate 3110. The nozzle bar 3210 mayhave a vertically extended bar shape. The nozzle rod 3220 may be joinedto an upper portion of the nozzle bar 3210. The nozzle rod 3220 may beshaped like a rod, which may horizontally extend from the upper portionof the nozzle bar 3210. The nozzle 3230 may be provided on a bottomsurface of an end portion of the nozzle rod 3220. The nozzle 3230 mayinclude an ejecting port provided on a bottom surface thereof and theejecting port is used to jet a fluid.

The nozzle driver 3240 may be provided below the nozzle bar 3210 at ajoining region between the nozzle bar 3210 and the nozzle rod 3220, andat a joining region between the nozzle rod 3220 and the nozzle 3230. Thenozzle driver 3240 may move or rotate the nozzle bar 3210, the nozzlerod 3220, or the nozzle 3230 and may adjust a position of the nozzle3230 and a jetting angle of the fluid.

FIG. 4 is a side view illustrating the nozzle unit 3200 of FIG. 2,according to an exemplary embodiment of the inventive concept.

The nozzle driver 3240 may include, for example, a first nozzle driver3241 disposed below the nozzle bar 3210, a second nozzle driver 3242disposed at the joining region between the nozzle bar 3210 and thenozzle rod 3220, and a third nozzle driver 3243 disposed at the joiningregion between the nozzle rod 3220 and the nozzle 3230, as shown inFIGS. 2 through 4. In an exemplary embodiment, the first nozzle driver3241 may vertically move the nozzle bar 3210 or rotate the nozzle bar3210 around its own axis. The second nozzle driver 3242 may horizontallymove the nozzle rod 3220 and may adjust a length of the nozzle rod 3220.The third nozzle driver 3243 may rotate the nozzle 3230 around an axisof the nozzle rod 3220 and may adjust a jetting angle of fluid.

The configuration of the nozzle driver 3240 may not be limited to theabove-described example, and according to an embodiment, the number,structure, disposition, and function of the nozzle driver 3240 may bevariously changed as the need arises. For example, according to anembodiment, at least one of the first nozzle driver 3241, the secondnozzle driver 3242 and the third nozzle driver 3243 may be omitted.Alternatively, the third nozzle driver 3243 may be provided at the sameor substantially the same position as the second nozzle driver 3242, andthe nozzle bar 3210, not the nozzle 3230, may be rotated to adjust thejetting angle of fluid. In addition, the nozzle unit 3200 may have afixed nozzle configured to spray a fluid in a vertical direction withoutusing the nozzle driver 3240.

According to the above-described example, the nozzle unit 3200 may jetthe fluid onto the top surface of the substrate S, but the exemplaryembodiments of the inventive concept are not limited thereto. Forexample, according to an embodiment, the nozzle unit 3200 may jet thefluid toward a side of the substrate S.

FIG. 5 is a sectional view illustrating the nozzle unit 3200 of FIG. 2,according to an exemplary embodiment of the inventive concept.

Referring to FIG. 5, the nozzle 3230 of the nozzle unit 3200 may beprovided at an end portion of the nozzle rod 3220 extending from thenozzle bar 3210. The nozzle 3230 may have an ejecting port with an axisparallel or substantially parallel to the horizontal direction.Accordingly, the nozzle 3230 may jet the fluid in the horizontaldirection. The first nozzle driver 3241 may vertically move or rotatethe nozzle bar 3210.

According to the above-described example, a single nozzle unit 3200 maybe provided in the process chamber 3000, but in an embodiment, theprocess chamber 3000 may include a plurality of nozzle units 3200.

FIG. 6 is a plan view illustrating the process chamber 3000 of FIG. 2,according to an exemplary embodiment of the inventive concept.

The process chamber 3000 may include a plurality of nozzle units 3200.For example, as shown in FIG. 6, the process chamber 3000 may include afirst the nozzle unit 3200 a and a second the nozzle unit 3200 b. Thenozzle units 3200 may jet the same fluid or different fluids from eachother. The nozzle units 3200 may perform the jetting processsimultaneously or independently.

The supplying unit 3300 may provide a fluid to the nozzle unit 3200. Thefluid may include at least one of solvents, abrasives, chemicals, andadditives.

A polishing target may be polished through a collision with an abrasive.By using a chemical, the polishing target may be softened and may bemore easily polished by the abrasive. An additive may be attached on anon-target layer other than the polishing target, thereby preventing thenon-target layer from being polished by the abrasive.

In an exemplary embodiment, deionized water may be used as a solvent.According to an embodiment, the abrasive may include one of variousparticles (e.g., of silica (SiO₂), alumina (Al₂O₃), ceria (CeO₂), andmagnesia (MgO)) and a solution including the particles.

According to an embodiment, the chemical may be at least one solutionof, for example, KOH, HF, H₂O₂, NH₄OH, HCl, H₂SO₄, and any combinationthereof, but exemplary embodiments of the inventive concept are notlimited thereto.

The additive may be at least one polymeric material, such as polyacrylicacid (PAA) or polyethyleneimine (PIE), but exemplary embodiments of theinventive concept are not limited thereto. For example, variousmaterials may be used as the additive depending on the material of thenon-target layer.

The supplying unit 3300 may include a storage 3310 for storing thefluid, a supplying conduit 3320 for connecting the storage 3310 with thenozzle unit 3200, a valve 3330 for controlling a flow rate of a fluidflowing through the supplying conduit 3320, and a pump 3340 forpressurizing the fluid supplied in the supplying conduit 3320.

In an exemplary embodiment, the supplying unit 3300 may include aplurality of storages 3310. The storages 3310 may store differentmaterials from each other.

FIG. 7 is a schematic diagram illustrating the supplying unit of FIG. 2,according to an exemplary embodiment of the inventive concept.

Referring to FIG. 7, the supplying unit 3300 may include a first storage3311, a first supplying conduit 3321, a first valve 3331, a secondstorage 3312, a second supplying conduit 3322, a second valve 3332, andthe pump 3340.

The first storage 3311 may store a first fluid. In an exemplaryembodiment, the first fluid may be a solvent. The first supplyingconduit 3321 may connect the first storage 3311 with the nozzle unit3200. The first valve 3331 and the pump 3340 may be provided on thefirst supplying conduit 3321.

The second storage 3312 may store a second fluid. In an exemplaryembodiment, the second fluid may include at least one of chemicals,abrasives, and additives. The second supplying conduit 3322 may connectthe second storage 3312 with the nozzle unit 3200. According to anembodiment, the second supplying conduit 3322 may have a structurediverging from the first supplying conduit 3321. The second valve 3332may be provided on the second supplying conduit 3322.

According to the above-described structure, the supplying unit 3300 maysupply a fluid, in which the first fluid and the second fluid are mixedwith each other, to the nozzle unit 3200. The first valve 3330 and thesecond valve 3332 may control flow rates of fluids flowing through thefirst and second supplying conduits 3321 and 3322, and the fluid maythus have a predetermined chemical composition.

According to the above-described example, the second fluid may includeat least one of chemicals, abrasives, and additives, but the exemplaryembodiments of the inventive concept are not limited thereto.

FIG. 8 is a schematic diagram illustrating the supplying unit 3300 ofFIG. 3, according to an exemplary embodiment of the inventive concept.

Referring to FIG. 8, the supplying unit 3300 may include the firststorage 3311, the first supplying conduit 3321, the first valve 3331,the second storage 3312, the second supplying conduit 3322, the secondvalve 3332, a third storage 3313, a third supplying conduit 3323, athird valve 3333, a fourth storage 3314, a fourth supplying conduit3324, a fourth valve 3334, a fifth valve 3335, and the pump 3340.

In an embodiment, the first storage 3311 may store a solvent, the secondstorage 3312 may store a chemical, the third storage 3313 may store anabrasive, and the fourth storage 3314 may store an additive. Each of thesupplying conduits 3321, 3322, 3323, and 3324 may connect the nozzleunit 3200 with the storages 3311, 3312, 3313, and 3314, respectively. Inan exemplary embodiment, the second, third, and fourth supplyingconduits 3322, 3323, and 3324 may be merged with each other before beingconnected to the first supplying conduit 3331.

Flow rates of fluids flowing through the supplying conduits 3321, 3322,3323 and 3324 may be independently controlled by the valves 3331, 3332,3333, 3334, and 3335, and thus, the fluid with a predetermined contentratio of the solvent, the chemical, the abrasive, and the additive maybe supplied to the pump 3340. The first to fourth valves 3331-3334 maycontrol flow rates of fluids flowing through the first to fourthsupplying conduits 3321-3324, respectively, and the fifth valve 3335 maycontrol a flow rate of a fluid flowing through a merged conduit of thesecond, third, and fourth supplying conduits 3322, 3333, and 3334.

The process chambers 3000 which are used for a jet polishing processhave been described, but at least one of the process chambers 3000 maybe used to perform a different process from the jet polishing process.In this case, the substrate S may be transferred between the processchambers 3000 by the transfer chamber 2200, such that the jet polishingprocess can be successively performed before and after the differentprocess.

In an exemplary embodiment, at least one of the process chambers 3000may perform a dry or wet cleaning process. The substrate S may undergothe jet polishing process in one of the process chambers, and thenundergo the dry or wet cleaning process in another of the processchambers. Alternatively, the substrate S may be treated by the jetpolishing process before undergoing the dry or wet cleaning process.

In an exemplary embodiment, at least one of the process chambers 3000may be used to perform etching, strip, ashing or other processes whichmay result in contaminants remaining on the substrate S. In this case,the substrate S may undergo a contamination causing process in one ofthe process chambers, and undergo the jet polishing process in anotherof the process chambers.

According to an embodiment, the substrate treating apparatus 100 mayfurther include a controller.

The controller may control the above-described components of thesubstrate treating apparatus 100. For example, according to anembodiment, the controller may control an operation of the index robot1210 or the transferring robot 2210. In an exemplary embodiment, thecontroller may control an open/close operation of a door of eachchamber. In an exemplary embodiment, the controller may control therotation driver 3140 and the nozzle driver 3240 to control an operationof the supporting unit 3100 or the nozzle unit 3200. In an embodiment,the controller may control the valve 3330 or the pump 3340 and mayadjust a flow rate or a fluid pressure of a fluid flowing through thesupplying conduit 3320.

The controller may be realized in hardware or software or using acombination thereof.

When realized in hardware, the controller may be an electronic device,such as application specific integrated circuits (ASICs), digital signalprocessors (DSPs), digital signal processing devices (DSPDs),programmable logic devices (PLDs), field programmable gate arrays(FPGAs), processors, micro-controllers, microprocessors, and so forth.

When realized in software, the controller may be realized by softwarecodes or software applications written in at least one programminglanguage. The software may be executed by a controller realized inhardware. In addition, the software may be transmitted from an externaldevice, e.g., a server, and installed on a hardware device.

A substrate treating method according to an exemplary embodiment of theinventive concept will be described below with reference to FIGS. 9 and10. In an exemplary embodiment, the substrate treating method may beperformed using the substrate treating apparatus 100 described above,but the exemplary embodiments of the inventive concept are not limitedthereto. In addition, the substrate treating method may be stored in theform of codes or a computer program in a recording medium that can beread by a computer.

FIG. 9 is a flow chart illustrating a substrate treating methodaccording to an exemplary embodiment of the inventive concept, and FIG.10 is a flow chart illustrating a jet polishing process according to anexemplary embodiment of the inventive concept.

Referring to FIG. 9, the substrate treating method may include loadingthe substrate S in the process chamber 3000 (in S1100), performing a jetpolishing process (in S1200), and unloading the substrate S from theprocess chamber 3000 (in S1300). In an exemplary embodiment, the jetpolishing process (in S1200) may include supporting the substrate S (inS1210), supplying a fluid onto the nozzle unit 3200 (in S1220), jettingthe fluid onto the substrate S (in S1230), and performing a jetpolishing process on the substrate S (in S1240).

The substrate S may be loaded into the process chamber 3000 (in S1100).The carrier C with the substrate S may be loaded on the load port 1100by using a delivering apparatus, such as an overhead transfer apparatus.Using the index robot 1210, the substrate S may be unloaded from thecarrier C and be delivered to a buffer slot. The transferring robot 2210may unload the substrate S from the buffer chamber 2100 and load thesubstrate S into the process chamber 3000. In an embodiment, beforeloading the substrate S into the process chamber 3000, the substrate Smay be loaded in other process chambers and undergo a process other thanthe jet polishing process.

The jet polishing process may be performed on the substrate S loaded inthe process chamber 3000 (in S1200).

As shown in FIG. 10, the substrate S may be laid on the supporting plate3110 of the process chamber 3000. The substrate S may be supported bythe supporting member 3120 (in S1210). For example, according to anembodiment, an edge portion of the substrate S may be supported by thesupporting member 3120. In an exemplary embodiment, the substrate S maybe laid in such a way that a bottom surface thereof is a patternedsurface and a top surface thereof is a non-patterned surface. Thesubstrate S may be fixed at a predetermined position by the supportingmember 3120.

The supplying unit 3300 may supply a fluid into the nozzle unit 3200 (inS1220). The fluid may be supplied from the storage 3310 to the nozzleunit 3200 through the supplying conduit 3320.

When the supplying unit 3300 has a plurality of storages 3310 and aplurality of supplying conduits 3320, the valves 3330 may be provided onthe supplying conduits 3320, respectively, and may control a flow rateof a fluid flowing through the supplying conduit 3320 and may adjust thecomposition or content of the resulting fluid. Since a polishing rate ofthe substrate S is proportional or substantially proportional to thecontent of abrasive in the fluid, the polishing process can be rapidlyor slowly performed by increasing or decreasing a flow rate of abrasive.For example, according to an embodiment, the supplying unit 3300 maycontrol flow rates of the supplying conduits 3320 or the content ofchemical or additive in the fluid to improve process efficiency.

The pump 3340 provided on the supplying conduit 3320 may control a fluidpressure of the fluid, and the fluid pressure may determine a jettingpressure of the fluid to be jetted from the nozzle 3230.

The nozzle unit 3200 may jet the fluid onto the top surface of thesubstrate S (in S1230).

The nozzle driver 3240 may move and rotate the nozzle bar 3210 and thenozzle rod 3220, and thus, the nozzle 3230 may be moved on apredetermined position of the substrate S. The nozzle 3230 may berotated by the nozzle driver 3240 and may control a predeterminedjetting angle of the fluid. In the jetting of the fluid (in S1230), ajetting pressure of the fluid may be controlled by, for example, thepump 3340.

When the nozzle 3230 is positioned at a predetermined position, thefluid may be jetted from the nozzle 3230. Using the jetting technique,the fluid may be locally and intensively jetted on a specific positionof the substrate S. In an exemplary embodiment, the substrate S may berotated by the supporting unit 3100.

The substrate S may be polished by a jet of the fluid (in S1240).

For example, according to an embodiment, the polishing may includeremoving contaminants with the abrasive contained in the fluid.According to an embodiment, a portion of the deposition layer depositedon the non-patterned surface of the substrate S may include contaminants(e.g., particles that deteriorate the performance of the semiconductordevice).

FIG. 11 is a diagram illustrating a process of removing a depositionlayer from the substrate A, according to an exemplary embodiment of theinventive concept. Referring to FIG. 11, an abrasive Ab in the fluid Fmay collide with the deposition layer D on the substrate S at highspeed, thereby polishing and removing a deposition layer D from thesubstrate S.

Since the fluid is jetted by the nozzle unit 3200, the fluid may belocally and intensively jetted on a specific region of the substrate S.Accordingly, a specific region of the substrate S (for example, a regionprovided with the contaminants) may be selectively polished.

The bevel region may be easily polished due to the localized jetting ofthe fluid. When a mechanical polishing tool (e.g., polishing pad) isused, the bevel region might not be effectively polished owing to asloped profile of the bevel region. However, in the substrate treatingapparatus 1000, the jet polishing process can be performed on the bevelregion since a fluid jet is used to polish the bevel region.

The chemical may soften the contaminants or the polishing target. Byusing the chemical, the contaminants or the polishing target may besoftened and may be more easily polished by the abrasive.

FIG. 12 is a diagram illustrating a thickness of the deposition layer Daccording to the presence or absence of chemical, according to anexemplary embodiment of the inventive concept. Referring to FIG. 12, afirst polishing thickness d1 is a thickness of the deposition layer Dpolished using a conventional polishing process. A second polishingthickness d2 is a thickness of the deposition layer D polished using thejet polishing process, in which the chemical is not used according to anexemplary embodiment of the inventive concept. A third polishingthickness d3 is a thickness of the deposition layer D polished using thejet polishing process, in which the chemical is used to soften thepolishing target according to an exemplary embodiment of the inventiveconcept.

The additive may protect a surface of the substrate or a non-targetlayer.

FIG. 13 is a diagram illustrating an additive that can be used toprotect a surface of a substrate S or a layer on the substrate S.Referring to FIG. 13, the additive Ad may be attached on the surface ofthe substrate S or a second layer D2 provided on the substrate S. Theadditive Ad may be formed of a material having polishing resistance tothe abrasive Ab. Accordingly, the surface of the substrate S or thesecond layer D2 may be prevented from being polished by the abrasive Abcontained in the fluid jet. A first layer D1, which is not covered withthe additive Ad, may be selectively polished by the fluid jet.

FIG. 14 is a graph showing a correlation between a jetting pressure anda polishing thickness of the substrate S, according to an exemplaryembodiment of the inventive concept.

Referring to FIG. 14, a polishing rate may be proportional orsubstantially proportional to the jetting pressure. Accordingly, thepolishing process can be rapidly or slowly performed by increasing ordecreasing the jetting pressure, which may be controlled by the pump3340.

The jet polishing process described above with reference to FIGS. 1through 14 may be used for a planarization process that makes a topsurface of the substrate or a layer on the substrate flat. For example,according to an embodiment, the planarization process using the jetpolishing process may include providing or colliding the abrasive to thenon-patterned surface and the patterned surface of the substrate S.

Hereinafter, a planarization process performed on the bevel region ofthe substrate S is described according to an exemplary embodiment of theinventive concept.

The nozzle driver 3240 may move or rotate the nozzle bar 3210 and thenozzle rod 3220 in such a way that the nozzle 3230 is positioned on aportion of the bevel region of the substrate S. Alternatively, thenozzle driver 3240 may adjust the jetting angle of the nozzle 3230 insuch a way that the fluid from the nozzle 3230 is jetted on a portion ofthe bevel region of the substrate S. In an exemplary embodiment, duringthe fluid jetting process, the substrate S may be rotated by therotation driver 3140, and thus, the fluid can be jetted to the wholebevel region of the substrate S.

During the fluid jetting process, the bevel region of the substrate Smay be polished by the abrasive contained in the fluid, thus resultingin the surface of the substrate S being flat.

According to an embodiment, the planarization process on the bevelregion may be performed on the patterned and non-patterned surfaces ofthe substrate S.

When the jet polishing process is terminated, the substrate S may beunloaded (in S1300 of FIG. 9). According to an embodiment, thetransferring robot 2210 may move the substrate S from the processchamber 3000 to the buffer slot, and the index robot 1210 may move thesubstrate S from the buffer chamber 2100 to the carrier C.Alternatively, the transferring robot 2210 may move the substrate S froma first process chamber of the process chambers to a second processchamber of the process chambers. The second process chamber may performa process other than the jet polishing process.

According to an exemplary embodiment of the inventive concept, a jetpolishing process may include a step of jetting a fluid on a substrateto effectively perform an abrasive polishing process.

While the inventive concepts has been particularly shown and describedwith reference to exemplary embodiments thereof, it will be understoodby one of ordinary skill in the art that variations in form and detailmay be made therein without departing from the spirit and scope of theinventive concept as defined by the attached claims.

1.-9. (canceled)
 10. A substrate treating apparatus comprising: asupporting unit configured to support a substrate; a nozzle unitconfigured to jet a fluid containing an abrasive onto the substrate; anda supplying unit configured to supply the fluid to the nozzle unit. 11.The apparatus of claim 10, wherein the supplying unit comprises a firststorage configured to store a solvent, a second storage configured tostore the abrasive, a first supplying conduit configured to connect thefirst storage to the nozzle unit, and a second supplying conduitconfigured to connect the second storage to the first supplying conduit.12. The apparatus of claim 11, wherein the second storage stores achemical, wherein the chemical softens a layer provided on thesubstrate.
 13. The apparatus of claim 11, wherein the second storagestores an additive, wherein the additive protects a surface of thesubstrate or a layer provided on the substrate.
 14. The apparatus ofclaim 11, wherein the supplying unit further comprises valves providedon the first and second supplying conduits and a controller, wherein thecontroller controls the valves to adjust a content of the abrasive inthe fluid.
 15. The apparatus of claim 10, wherein the nozzle unitincludes an end portion through which the fluid is jetted, and whereinthe end portion of the nozzle unit is located at the same orsubstantially the same level as a top surface of the substrate and facesa side surface of the supporting unit.
 16. A substrate treatingapparatus comprising: a first module configured to jet a fluidcontaining an abrasive through a nozzle to a substrate; and an secondmodule configured to transfer the substrate to the first module, whereinthe nozzle is positioned over a top surface of the substrate or ispositioned adjacent to a side of the substrate.
 17. The substratetreating apparatus of claim 16, wherein the fluid includeschemical-mechanical polishing (CMP) slurry.
 18. The substrate treatingapparatus of claim 16, wherein the fluid includes a solvent, a chemical,or an additive.
 19. The substrate treating apparatus of claim 18,wherein the chemical includes KOH, HF, H₂O₂, NH₄OH, HCl, or H₂SO₄. 20.The substrate treating apparatus of claim 18, wherein the additiveincludes polyacrylic acid (PAA) or polyethyleneimine (PIE).